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 MMBD4148_1 ? NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 4 June 2009 3 of 10 NXP Semiconductors MMBD4148 High-speed switching diode 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤0.02. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. [3] When switched from IF = 10 mA; tr =20ns. Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance fromin free air junction to ambient [1]- - 500 K/W Rth(j-t) thermal resistance from junction to tie-point - - 330 K/W Table 7. Characteristics Tamb=25°C unless otherwise speci?ed. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage [1] IF= 1 mA - - 715 mV IF= 10 mA - - 855 mV IF=50mA --1V IF = 150 mA - - 1.25 V IR reverse current VR =25V --30nA VR = 75 V - - 0.5 μA VR = 25 V; Tj = 150 °C --30μA VR= 75 V; Tj= 150°C --50μA Cd diode capacitancef = 1 MHz; VR= 0 V - - 1.5 pF trrreverse recovery time[2]--4ns VFR forward recovery voltage [3] - - 1.75 V |